Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology

Home | About RECERCAT | Contact

Català | Castellano

All of RECERCAT

By Communities &
Collections By Defense Date By Authors By Titles By Subject

This Collection

By Defense Date By Authors By Titles By Subject

Statistics

View Statistics All RECERCAT

My RECERCAT

Other repositories directory

RECERCAT Home > Universitat Politècnica de Catalunya > Documents de recerca > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2117/130108

Title:	Analysis of body bias and RTN-induced frequency shift of low voltage ring oscillators in FDSOI technology
Author:	Barajas Ojeda, Enrique; Aragonès Cervera, Xavier; Mateo Peña, Diego; Moll Echeto, Francisco de Borja; Rubio Sola, Jose Antonio; Martin Martínez, Javier; Rodríguez Martínez, Rosana; Porti Pujal, Marc; Nafria, M.; Castro López, Rafael; Roca Moreno, Elisenda; Fernandez, Francisco V.
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	Electronic circuits powered at ultra low voltages (500 mV and below) are desirable for their low energy and power consumption. However, RTN (Random Telegraph Noise)-induced threshold voltage variations become very significant at such supply voltages. This paper evaluates the impact of RTN on additional jitter in a ring oscillator. Since FDSOI allows a large range of body bias voltages, this work studies how body biasing affects the oscillation frequency but also the jitter effects. The impact of RTN in NMOS and PMOS devices on frequency as well as the levels of supplementary jitter introduced by RTN are evaluated and compared with classical device noise.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics -Electronic circuits -Body Bias -FDSOI -Jitter -Ring Oscillators -RTN -Ultra-Low Voltage Jitter -Low power electronics -MOS devices -Oscillators (electronic) -Threshold voltage -Body bias -FDSOI -Fdsoi technologies -Oscillation frequency -Random telegraph noise -Ring oscillator -Threshold voltage variation -Ultra-low-voltage -Bias voltage -Circuits electrònics
Rights:
Document type:	Article - Published version Conference Object
Published by:	Institute of Electrical and Electronics Engineers (IEEE)
Share:

Show full item record

All of RECERCAT

This Collection

Statistics

My RECERCAT

Related documents

Other documents of the same author