In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors

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Title:	In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors
Author:	Orpella García, Alberto; Bardés Llorensí, Daniel; Alcubilla González, Ramón; Marsal, L F; Pallarès Marzal, Josep
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type of structure. The high values obtained for G/sub E/ are believed to be due to the valance band discontinuity between the Si/sub 0.8/C/sub 0.2/ layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors -Transistors -Silicon compounds -Amorphous semiconductors -Bipolar transistors -Ion implantation -Annealing -Semiconductor device measurement -Valence bands -Minority carriers -Current density -Transistors
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Document type:	Article - Published version Article
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