dc.contributor.author |
Porti i Pujal, Marc |
dc.contributor.author |
Nafría i Maqueda, Montserrat |
dc.contributor.author |
Aymerich Humet, Xavier |
dc.contributor.author |
Olbrich, A. |
dc.contributor.author |
Ebersberger, B. |
dc.contributor.author |
American Physical Society |
dc.date |
2001 |
dc.identifier |
https://ddd.uab.cat/record/116266 |
dc.identifier |
urn:10.1063/1.1382624 |
dc.identifier |
urn:oai:ddd.uab.cat:116266 |
dc.identifier |
urn:recercauab:ARE-28971 |
dc.identifier |
urn:articleid:10773118v78n26p4181 |
dc.identifier |
urn:scopus_id:0035948145 |
dc.identifier |
urn:wos_id:000169340000040 |
dc.identifier |
urn:oai:egreta.uab.cat:publications/a5cc66c4-2ce8-45aa-99aa-325282526570 |
dc.format |
application/pdf |
dc.language |
eng |
dc.publisher |
|
dc.relation |
Applied physics letters ; Vol. 78, Issue 26 (May 2001), p. 4181-4183 |
dc.rights |
open access |
dc.rights |
Tots els drets reservats. |
dc.rights |
https://rightsstatements.org/vocab/InC/1.0/ |
dc.subject |
Atomic force microscopes |
dc.subject |
Atomic force microscopy |
dc.subject |
Electrical properties |
dc.subject |
Thin films |
dc.title |
Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy |
dc.type |
Article |
dc.description.abstract |
A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/release of single charges in the defects generated during stress. |