Title: | Channel-Hot-Carrier degradation of strained MOSFETs : A device level and nanoscale combined approach |
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Author: | Wu, Qian; Porti i Pujal, Marc; Bayerl, Albin; Martin Martinez, Javier; Rodríguez Martínez, Rosana; Nafría i Maqueda, Montserrat; Aymerich Humet, Xavier; Simoen, E. |
Abstract: | |
Subject(s): | -MOSFETs -Electric currents -Strain measurement -Carrier mobility -Dielectrics |
Rights: | open access
Tots els drets reservats. https://rightsstatements.org/vocab/InC/1.0/ |
Document type: | Article |
Published by: | |
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Uri: | https://ddd.uab.cat/record/163086 |