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Title:	Stability of hydrogenated nanocrystalline silicon thin-film transistors
Author:	Orpella, Albert; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D.; Fonrodona Turon, Marta; Soler Vilamitjana, David; Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Andreu i Batallé, Jordi; Alcubilla González, Ramón
Other authors:	Universitat de Barcelona
Abstract:	Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays.
Subject(s):	-Pel·lícules fines -Silici -Nanocristalls -Semiconductors -Catàlisi -Deposició química en fase vapor -Thin films -Silicon -Nanocrystals -Semiconductors -Catalysis -Chemical vapor deposition
Rights:	(c) Elsevier B.V., 2001
Document type:	Article Article - Accepted version
Published by:	Elsevier B.V.
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