Per accedir als documents amb el text complet, si us plau, seguiu el següent enllaç: http://hdl.handle.net/2117/28094

Títol:	Efficiency comparison between SiC- and Si-based active neutral-point clamped converters
Autor/a:	Nicolás Apruzzese, Joan; Maset, Enrique; Busquets Monge, Sergio; Esteve, Vicente; Bordonau Farrerons, José; Calle Prado, Alejandro; Jordán, José
Altres autors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Escola Tècnica Superior d'Enginyeria Industrial de Barcelona; Universitat Politècnica de Catalunya. GREP - Grup de Recerca en Electrònica de Potència
Abstract:	This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental tests are carried out to measure their overall losses and efficiency. Finally, experimental results are compared with the estimations to support the analysis. The efficiency of the SiC converter is higher in all the switching-frequency range.
Matèries:	-Àrees temàtiques de la UPC::Enginyeria electrònica -Metal oxide semiconductors -Metal oxide semiconductor field-effect transistors -SiC technology -SiC MOSFET -wide band gap -active neutral-point clamped -efficiency -multilevel conversion -Transistors -Metall-òxid-semiconductors -Transistors MOSFET
Drets:	Attribution-NonCommercial-NoDerivs 3.0 Spain http://creativecommons.org/licenses/by-nc-nd/3.0/es/
Tipus de document:	Article - Versió publicada Objecte de conferència
Compartir:

Mostra el registre complet del document