Title:
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1-D memristor networks as ternary storage cells
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Author:
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Vourkas, Ioannis; Abusleme, Angel; Sirakoulis, Georgios; Rubio Sola, Jose Antonio
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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Due to its inherent analog nature, the memristor can store information in a continuous form, being thus well-suited for compact multi-bit memory cell technology. In this context, threshold-type switching devices show great retention and switching speed but still poor controllability. To this end, in this work we use one-dimensional (1-D) networks of anti-serially connected threshold-type memristors as means to to create voltage-controlled ternary memristive switches. We demonstrate that the number of memristors and their polarity define the memristance corresponding to the different stored information. We present a simulation-based study of their performance using a threshold-type switching model of bipolar voltage-controlled memristors, and comment on the applied programming-pulse characteristics and the most important device-level properties. |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics -Memristors -Memristors -Resistive switching -Resistive RAM -Neuromprphic -Mult-bit storage -Ternaru logic -Memristor network -Semiconductors de commutació |
Rights:
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Document type:
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Article - Submitted version Conference Object |
Published by:
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Institute of Electrical and Electronics Engineers (IEEE)
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