Scaling of device dimensions toward nano-scale regime has made it essential to innovate novel design techniques for improving the circuit robustness. This work proposes an implementation of adaptive proactive reconfiguration methodology that can first monitor process variability and BTI aging among 6T SRAM memory cells and then apply a recovery mechanism to extend the SRAM lifetime. Our proposed technique can extend the memory lifetime between 2X to 4.5X times with a silicon area overhead of around 10% for the monitoring units, in a 1kB 6T SRAM memory chip.