Investigation of the formation of silicon nanocrystals by annealing of amorphous SiCx/c-Si structures

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Torres, I
dc.contributor.author	Vetter, M
dc.contributor.author	Ferré Burrull, José
dc.contributor.author	Marsal, L F
dc.contributor.author	Orpella García, Alberto
dc.contributor.author	Alcubilla González, Ramón
dc.contributor.author	Pallarès Marzal, Josep
dc.date	2007-04
dc.identifier.citation	Torres, I., Vetter, M., Ferré-Borrull, J, Marsal, L., Orpella, A., Alcubilla, R., Pallarès, J. Investigation of the formation of silicon nanocrystals by annealing of amorphous SiCx/c-Si structures. "Physica E. Low-dimensional systems and nanostructures", Abril 2007, vol. 38, núm. 1-2, p. 36-39.
dc.identifier.citation	1386-9477
dc.identifier.citation	10.1016/j.physe.2006.12.025
dc.identifier.uri	http://hdl.handle.net/2117/117882
dc.language.iso	eng
dc.relation	https://www.sciencedirect.com/science/article/pii/S1386947706006072
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject	Amorphous semiconductors
dc.subject	Silicon nanocrystals
dc.subject	Annealing
dc.subject	Silicon-carbon alloys
dc.subject	Optical properties X-ray diffraction
dc.subject	Fourier transform infrared spectra
dc.subject	Semiconductors amorfs
dc.title	Investigation of the formation of silicon nanocrystals by annealing of amorphous SiCx/c-Si structures
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	In this work, we study the changes in the optical properties of 300-nm-thick hydrogenated amorphous silicon carbide layers after an annealing process. Both intrinsic and phosphorus-doped amorphous silicon carbide layers (a-SiCx:H) were deposited on silicon wafers by plasma enhanced chemical vapour deposition (PECVD) at 400 °C and annealed in a quartz furnace at 800 °C. The presence of randomly oriented silicon nanocrystals was confirmed by X-ray diffraction (XRD) measurements after the partial recrystallization process only in the doped layers. The presence or the absence of the nanocrystals clearly changes the Fourier transform infrared (FTIR) spectra. From the fitting of the experimental curves with the model of Lorentz oscillators, the refractive index and the extinction coefficient of the different layers were obtained.
dc.description.abstract	Peer Reviewed

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