Title:
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3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature
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Author:
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Li, Fan; Sharma, Yogesh; Walker, David; Hindmarsh, Steven A.; Jennings, Mike; Martin, David; Fisher, Craig; Gammon, Peter; Perez-Tomas, Amador; Mawby, Phil
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Abstract:
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Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10Ω cm) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm/V · s) was achieved compared with the annealed devices. |
Subject(s):
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-3C-SiC -Channel mobility -MOSFET -Ohmic contact -Reliability |
Rights:
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open access
Tots els drets reservats.
https://rightsstatements.org/vocab/InC/1.0/ |
Document type:
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Article |
Published by:
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Share:
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Uri:
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https://ddd.uab.cat/record/203030
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