dc.contributor.author |
Li, Fan |
dc.contributor.author |
Sharma, Yogesh |
dc.contributor.author |
Walker, David |
dc.contributor.author |
Hindmarsh, Steven A. |
dc.contributor.author |
Jennings, Mike |
dc.contributor.author |
Martin, David |
dc.contributor.author |
Fisher, Craig |
dc.contributor.author |
Gammon, Peter |
dc.contributor.author |
Perez-Tomas, Amador |
dc.contributor.author |
Mawby, Phil |
dc.date |
2016 |
dc.identifier |
https://ddd.uab.cat/record/203030 |
dc.identifier |
urn:10.1109/LED.2016.2593771 |
dc.identifier |
urn:oai:ddd.uab.cat:203030 |
dc.identifier |
urn:scopus_id:84984674663 |
dc.identifier |
urn:articleid:07413106v37n9p1189 |
dc.identifier |
urn:wos_id:000383099400029 |
dc.identifier |
urn:oai:egreta.uab.cat:publications/8a96f020-e5c0-442f-a55a-b8d459af5599 |
dc.identifier |
urn:icn2uab:4129900 |
dc.format |
application/pdf |
dc.language |
eng |
dc.publisher |
|
dc.relation |
IEEE electron device letters ; Vol. 37, Issue 9 (September 2016), p. 1189-1192 |
dc.rights |
open access |
dc.rights |
Tots els drets reservats. |
dc.rights |
https://rightsstatements.org/vocab/InC/1.0/ |
dc.subject |
3C-SiC |
dc.subject |
Channel mobility |
dc.subject |
MOSFET |
dc.subject |
Ohmic contact |
dc.subject |
Reliability |
dc.title |
3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature |
dc.type |
Article |
dc.description.abstract |
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10Ω cm) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm/V · s) was achieved compared with the annealed devices. |