dc.contributor.author |
Perez-Tomas, Amador |
dc.contributor.author |
Catalan, Gustau |
dc.contributor.author |
Fontserè Recuenco, Abel |
dc.contributor.author |
Iglesias Santiso, Vanessa |
dc.contributor.author |
Chen, H. |
dc.contributor.author |
Gammon, Peter |
dc.contributor.author |
Jennings, M. R. |
dc.contributor.author |
Thomas, M. |
dc.contributor.author |
Fisher, C. A. |
dc.contributor.author |
Sharma, Y. K. |
dc.contributor.author |
Placidi, Marcel |
dc.contributor.author |
Chmielowska, M. |
dc.contributor.author |
Chenot, S. |
dc.contributor.author |
Porti i Pujal, Marc |
dc.contributor.author |
Nafría i Maqueda, Montserrat |
dc.contributor.author |
Cordier, Y. |
dc.date |
2015 |
dc.identifier |
https://ddd.uab.cat/record/212894 |
dc.identifier |
urn:10.1088/0957-4484/26/11/115203 |
dc.identifier |
urn:oai:ddd.uab.cat:212894 |
dc.identifier |
urn:scopus_id:84923668519 |
dc.identifier |
urn:articleid:13616528v26n11p115203 |
dc.identifier |
urn:wos_id:000350568900006 |
dc.identifier |
urn:icn2uab:4129953 |
dc.identifier |
urn:oai:egreta.uab.cat:publications/6a988a4a-6eb6-4e0e-927a-c516a8dd60ae |
dc.format |
application/pdf |
dc.language |
eng |
dc.publisher |
|
dc.relation |
Ministerio de Economía y Competitividad SEV-2013-0295 |
dc.relation |
Nanotechnology ; Vol. 26, Issue 11 (March 2015), art. 115203 |
dc.rights |
open access |
dc.rights |
Tots els drets reservats. |
dc.rights |
https://rightsstatements.org/vocab/InC/1.0/ |
dc.title |
Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor |
dc.type |
Article |
dc.description.abstract |
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor (Ids > 1 A mmˉ¹) to be defined (0.5 A mm¯¹ at 300 °C). The vertical breakdown voltage has been determined to be ~850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current. |