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Title:	Determination of the electron density in GaAs/AlxGa1-xAs heterostructures
Author:	Martorell Domenech, Juan; Sprung, Donald W. L.
Other authors:	Universitat de Barcelona
Abstract:	An optimized self-consistent method for determination of the quantal electron density is presented. It is applied, in the zero-temperature case, to devices with either partial or full donor ionization. A Thomas-Fermi approximation for the T=0 limit is developed and shown to be appropriate for systematic studies of the two-dimensional electron density, σ − . A suitable linear approximation is found that provides simple and accurate analytic expressions for σ − in terms of the physical parameters of the device.
Subject(s):	-Electrònica quàntica -Física de l'estat sòlid -Quantum electronics -Solid state physics
Rights:	(c) The American Physical Society, 1994
Document type:	Article Article - Published version
Published by:	The American Physical Society
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