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Título:
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Systematics of properties of the electron gas in deep-etched quantum wires
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Autor/a:
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Martorell Domenech, Juan; Sprung, Donald W. L.
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Otros autores:
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Universitat de Barcelona |
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Abstract:
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An efficient method is developed for an iterative solution of the Poisson and Schro¿dinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional (2D) approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods. |
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Materia(s):
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-Superfícies (Física)
-Semiconductors
-Propietats elèctriques
-Surfaces (Physics)
-Semiconductors
-Electric properties |
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Derechos:
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(c) The American Physical Society, 1996
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Tipo de documento:
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Artículo
Artículo - Versión publicada |
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Editor:
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The American Physical Society
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Compartir:
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