Experimental observation of oxygen-related defect state in pentacene thin films

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Title:	Experimental observation of oxygen-related defect state in pentacene thin films
Author:	Nadaždy, Vojtech; Durný, Rudolf; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Cheylan, Stephanie; Gmucová, K.
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	The authors report on a metastable defect observed in pentacene thin films. The defect, which is characterized by a hole trap at Ev+0.6 eV and attempt-to-escape frequency of 5x1012 s−1, can be reversibly created/removed under a negative/positive bias voltage applied to the aluminum/ pentacene Schottky diode at room temperature in air. Annealing the sample in vacuum at 360 K removes the defect and prevents its creation by application of any bias voltage in vacuum. Considering recent calculations of defects in pentacene the authors assume that the defect is formed by replacing one of the hydrogen atoms by an oxygen atom (C22 H13 O).
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica -Pentacene -Thin films -Schottky diode -Attempt-to-escape frequency -Hydrogen atom replacement -Pentacene thin films -Defects in pentacene -Negative bias voltage -Organic semiconductors -Oxigen atom -Positive bias voltage -Schottky barrier -Nanotecnologia
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Document type:	Article
Published by:	American Institute of Physics
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