Title:
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Analyzing stability concerns in the presence of variations in Subthreshold SRAM
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Author:
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Rana, Manish
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors; Canal Corretger, Ramon |
Abstract:
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In this work, we analyse the stability of the SRAM bitcells when operating in subthreshold supply voltages.We propose a new bit cell with higher stability than 6T Bitcell,that is able to discharge the bit lines in 41% less time than the 6T as it's discharge path is only of single transistor. |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats -Integrated circuits -Subliminals -inversió feble -SRAM Bit de cèl · lules -marge de soroll estàtic -N-corba -variacions del procés -Subthreshold -Weak Inversion -SRAM Bit-cell -Static Noise Margin -N-curve -Process Variations -Circuits integrats |
Rights:
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Document type:
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Research/Master Thesis |
Published by:
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Universitat Politècnica de Catalunya
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