This paper gives several building criteria for the design of microwave oscillators with MESFET (MESFET-MWO) in order to achieve low phase noise. From device low frequency noise model and identification of phase noise mechanisms generation and sources in MESFET-MWO, a novel expression of 1Hz single side noise power ro carrier power relation or ~(t) function is obtained. A low cost X band oscillator with high efficiency and medium power is built to prove the methods of phase noise reduction derived of that expression. The phase noise measured of the built oscillator allows us to doubt of the device noise model used.

Peer Reviewed