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Título:	Nonlinear effects of SiO2 layers in bulk acoustic wave resonators
Autor/a:	Collado Gómez, Juan Carlos; Mateu Mateu, Jordi; García Pastor, David; Perea Robles, Rafael; Hueltes Escobar, Alberto; Kreuzer, Susanne; Aigner, Robert
Otros autores:	Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. CSC - Components and Systems for Communications Research Group
Abstract:	©2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Abstract:	This paper presents the development of a comprehensive distributed circuit model to account for the existing nonlinear effects in bulk acoustic wave (BAW) resonators. The comprehensiveness of the model and its distributed implementation allow for the inclusion of the nonlinear effects occurring in any layer of the BAW configuration, not only the piezoelectric layer. The model has been applied to evaluate the nonlinear contribution of the piezoelectric layer and silicon dioxide (SiO₂) layer in the Bragg reflector. The nonlinear manifestations are a function of the frequency of the driving fundamental tones. Accurate measurements of state-of-the-art resonators validate the model proposed and confirm the contribution of the SiO₂ layer in the overall nonlinear performance.
Abstract:	Peer Reviewed
Materia(s):	-Àrees temàtiques de la UPC::Física::Acústica -Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats -Integrated circuits -Sound -Resonators -Acoustic waves -Bulk acoustic wave (BAW) -electroacoustic -Harmonic analysis -Integrated circuit modeling -Mathematical model -nonlinearities -Resonators -second harmonic (H2) -SiO2 -third harmonic (H3) -third-order intermodulation (IMD3) product. -Transmission line measurements -Circuits integrats -So -Ressonadors
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Tipo de documento:	Artículo - Versión presentada Artículo
Editor:	IEEE Microwave Theory and Techniques Society
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