Second order sigma-delta control of charge trapping for MOS capacitors

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Title:	Second order sigma-delta control of charge trapping for MOS capacitors
Author:	Bheesayagari, Chenna Reddy; Gorreta Mariné, Sergio; Pons Nin, Joan; Domínguez Pumar, Manuel
Other authors:	Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	This paper presents the circuit topology of a second order sigma-delta control of charge trapping for MOS capacitors. With this new topology it is possible to avoid the presence of plateaus that can be found in first-order sigma-delta modulators. Plateaus are unwanted phenomena in which the control is locked for a certain time interval (of unknown duration). In this case the control output is constant and therefore the controlled device is in fact in open-loop configuration. It is shown that the presence of plateaus is avoided in MOS capacitors using the proposed approach.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica -Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Processament del senyal -Dielectric devices -Charge trapping -MOS -Dielectric charging -Sigma-delta -Sliding mode control -Dispositius dielèctrics
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Document type:	Article - Submitted version Article
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