Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

Home | About RECERCAT | Contact

Català | Castellano

All of RECERCAT

By Communities &
Collections By Defense Date By Authors By Titles By Subject

This Collection

By Defense Date By Authors By Titles By Subject

Statistics

View Statistics All RECERCAT

My RECERCAT

Other repositories directory

RECERCAT Home > Universitat Politècnica de Catalunya > Documents de recerca > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2117/118025

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Ferre, R
dc.contributor.author	Orpella García, Alberto
dc.contributor.author	Muñoz Cervantes, Delfina
dc.contributor.author	Martín García, Isidro
dc.contributor.author	Recart, F
dc.contributor.author	Voz Sánchez, Cristóbal
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Cabarrocas, Roca I P
dc.contributor.author	Alcubilla González, Ramón
dc.date	2008-03
dc.identifier.citation	Ferre, R., Orpella, A., Muñoz, D., Martin, I., Recart, F., Voz, C., Puigdollers, J., Cabarrocas, R., Alcubilla, R. Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys. "Progress in photovoltaics", Març 2008, vol. 16, núm. 2, p. 123-127.
dc.identifier.citation	1062-7995
dc.identifier.citation	10.1002/pip.802
dc.identifier.uri	http://hdl.handle.net/2117/118025
dc.language.iso	eng
dc.relation	https://onlinelibrary.wiley.com/doi/abs/10.1002/pip.802
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject	Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject	Solar cells
dc.subject	Silicon
dc.subject	Passivation
dc.subject	Silicon carbide
dc.subject	Crystalline solar cells
dc.subject	Amorphous silicon
dc.subject	Antireflective
dc.subject	Phosphorus doped
dc.subject	Thermal stress
dc.subject	Cèl·lules solars
dc.subject	Silici
dc.title	Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3¿cm¿s-1 and 2¿cm¿s-1 on 1¿O¿cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high-temperature steps.
dc.description.abstract	Peer Reviewed

Show simple item record

All of RECERCAT

This Collection

Statistics

My RECERCAT

Related documents

Other documents of the same author