Experiments on MEMS Integration in 0.25 turn CMOS Process

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dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. ISSET - Integrated Smart Sensors and Health Technologies
dc.contributor.author	Michalik, Piotr Jozef
dc.contributor.author	Fernández, Daniel
dc.contributor.author	Wietstruck, Mehmet
dc.contributor.author	Kaynak, Mehmet
dc.contributor.author	Madrenas Boadas, Jordi
dc.date	2018-07-01
dc.identifier.citation	Michalik, P. J., Fernández, D., Wietstruck, M., Kaynak, M., Madrenas, J. Experiments on MEMS Integration in 0.25 turn CMOS Process. "Sensors", 1 Juliol 2018, vol. 18, núm. 7, p. 2111-1-2111-22.
dc.identifier.citation	1424-8220
dc.identifier.citation	10.3390/s18072111
dc.identifier.citation	29966375
dc.identifier.uri	http://hdl.handle.net/2117/121276
dc.language.iso	eng
dc.publisher	Multidisciplinary Digital Publishing Institute (MDPI)
dc.relation	http://www.mdpi.com/1424-8220/18/7/2111
dc.relation	info:eu-repo/grantAgreement/ES/6PN/TEC2011-27047
dc.relation	info:eu-repo/grantAgreement/ES/1PE/TEC2015-67278-R
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights	info:eu-repo/semantics/openAccess
dc.rights	http://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject	Integrated circuits
dc.subject	CMOS-MEMS
dc.subject	CMOS
dc.subject	MEMS
dc.subject	BEOL (Back End of Line)
dc.subject	Accelerometer
dc.subject	Circuits integrats
dc.title	Experiments on MEMS Integration in 0.25 turn CMOS Process
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	In this paper, we share our practical experience gained during the development of CMOS-MEMS (Complementary Metal-Oxide Semiconductor Micro Electro Mechanical Systems) devices in IHP SG25 technology. The experimental prototyping process is illustrated with examples of three CMOS-MEMS chips and starts from rough process exploration and characterization, followed by the definition of the useful MEMS design space to finally reach CMOS-MEMS devices with inertial mass up to 4.3 µg and resonance frequency down to 4.35 kHz. Furthermore, the presented design techniques help to avoid several structural and reliability issues such as layer delamination, device stiction, passivation fracture or device cracking due to stress.
dc.description.abstract	Peer Reviewed

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