N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/124669

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Pirriera, Della M
dc.contributor.author	Marsal Vinade, Albert
dc.contributor.author	Orpella García, Alberto
dc.contributor.author	Cheylan, Stephanie
dc.contributor.author	Voz Sánchez, Cristóbal
dc.contributor.author	Alcubilla González, Ramón
dc.date	2009-10
dc.identifier.citation	Puigdollers, J., Pirriera, D., Marsal, A., Orpella, A., Cheylan, S., Voz, C., Alcubilla, R. N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature. "Thin solid films", Octubre 2009, vol. 517, núm. 23, p. 6271-6274.
dc.identifier.citation	0040-6090
dc.identifier.citation	10.1016/j.tsf.2009.02.113
dc.identifier.uri	http://hdl.handle.net/2117/124669
dc.language.iso	eng
dc.relation	https://www.sciencedirect.com/science/article/pii/S0040609009003551
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject	Thin films
dc.subject	PTCDI–C13H27
dc.subject	Thin-film transistors
dc.subject	DOS
dc.subject	Capes fines
dc.title	N-type PTCDI¿C13H27 thin-film transistors deposited at different substrate temperature
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different substrate temperatures. The best device was obtained at 120 °C with a field-effect mobility of 0.12 cm2/V·s and threshold voltage around 46 V. In this work, the microstructure of the films is correlated with the device performance. In particular, the dependence of the activation energy for the channel conductance on gate voltages has been related to the properties of the layers.
dc.description.abstract	Peer Reviewed

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