To access the full text documents, please follow this link: http://hdl.handle.net/2117/124798
dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
---|---|
dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Roige, A |
dc.contributor.author | Fernandez Tejero, Javier |
dc.contributor.author | Osso, J.O |
dc.contributor.author | Goni, A.R |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.author | Vega, L. F |
dc.date | 2014-11-01 |
dc.identifier.citation | Roige, A., Fernandez, J., Osso, J., Goni, A., Martin, I., Voz, C., Alcubilla, R., Vega, L. On the observation of electron-hole liquid luminescence under low excitation in Al2O3-passivated c-Si wafers. "Physica status solidi. Rapid research letters", 1 Novembre 2014, vol. 8, núm. 11, p. 943-947. |
dc.identifier.citation | 1862-6254 |
dc.identifier.citation | 10.1002/pssr.201409336 |
dc.identifier.uri | http://hdl.handle.net/2117/124798 |
dc.language.iso | eng |
dc.relation | https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.201409336 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Física |
dc.subject | Photoluminescence |
dc.subject | Photoluminescence |
dc.subject | Electron-hole liquid |
dc.subject | Surface passivation |
dc.subject | Silicon |
dc.subject | Wafers |
dc.subject | Al2O3 |
dc.subject | Condensation |
dc.subject | Fotoluminescència |
dc.title | On the observation of electron-hole liquid luminescence under low excitation in Al2O3-passivated c-Si wafers |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract | |
dc.description.abstract |