In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/130749

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Orpella García, Alberto
dc.contributor.author	Bardés Llorensí, Daniel
dc.contributor.author	Alcubilla González, Ramón
dc.contributor.author	Marsal, L F
dc.contributor.author	Pallarès Marzal, Josep
dc.date	1999-11
dc.identifier.citation	Orpella, A. [et al.]. In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors. "IEEE electron device letters", Novembre 1999, vol. 20, núm. 11, p. 592-594.
dc.identifier.citation	0741-3106
dc.identifier.citation	10.1109/55.798054
dc.identifier.uri	http://hdl.handle.net/2117/130749
dc.language.iso	eng
dc.relation	https://ieeexplore.ieee.org/document/798054
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors
dc.subject	Transistors
dc.subject	Silicon compounds
dc.subject	Amorphous semiconductors
dc.subject	Bipolar transistors
dc.subject	Ion implantation
dc.subject	Annealing
dc.subject	Semiconductor device measurement
dc.subject	Valence bands
dc.subject	Minority carriers
dc.subject	Current density
dc.subject	Transistors
dc.title	In-situ doped amorphous Si0.8C0.2 emitter bipolar transistors
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type of structure. The high values obtained for G/sub E/ are believed to be due to the valance band discontinuity between the Si/sub 0.8/C/sub 0.2/ layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter.
dc.description.abstract	Peer Reviewed

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