A simple gate drive for SiC MOSFET with switching transient improvement

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/132621

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria de Projectes i de la Construcció
dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MCIA - Motion Control and Industrial Applications Research Group
dc.contributor.author	Ghorbani, Hamidreza
dc.contributor.author	Sala Caselles, Vicenç
dc.contributor.author	Paredes Camacho, Alejandro
dc.contributor.author	Romeral Martínez, José Luis
dc.date	2017
dc.identifier.citation	Ghorbani, H. [et al.]. A simple gate drive for SiC MOSFET with switching transient improvement. A: IEEE Industry Applications Society Annual Meeting. "2017 IEEE Industry Applications Society Annual Meeting: 1-5 Oct. 2017". Institute of Electrical and Electronics Engineers (IEEE), 2017, p. 1-6.
dc.identifier.citation	978-1-5090-4894-6
dc.identifier.citation	10.1109/IAS.2017.8101762
dc.identifier.uri	http://hdl.handle.net/2117/132621
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation	http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8101762&isnumber=8101679
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica
dc.subject	Electromagnetic interference
dc.subject	Gate driver (GD)
dc.subject	Electromagnetic interference (EMI)
dc.subject	SiC MOSFET
dc.subject	Switching losses
dc.subject	Electrònica -- Interferències
dc.title	A simple gate drive for SiC MOSFET with switching transient improvement
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	This paper presents a new active gate drive for SiC MOSFETs switching. The proposed driver is based on feedforward control method. The switch is benefited from a simple and effective analog gate driver (GD). The main achievement of this GD is the transient enhancement with minimum undesirable effect on the switching efficiency. Also, the electromagnetic interference (EMI) as the main threat to the operation of SiC MOSFET is eliminated by this method. The proposed GD has been validated through the simulation and experimental tests. All the evaluation have been carried out in a hard switching condition with high-frequency switching.
dc.description.abstract	Peer Reviewed

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