Stabilization of Broad Area Semiconductor Laser Sources

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dc.contributor	Universitat Politècnica de Catalunya. Departament de Física
dc.contributor	Universitat Politècnica de Catalunya. DONLL - Dinàmica no Lineal, Òptica no Lineal i Làsers
dc.contributor.author	Medina Pardell, Judith
dc.contributor.author	Ahmed, W. W.
dc.contributor.author	Kumar, Shubham
dc.contributor.author	Botey Cumella, Muriel
dc.contributor.author	Herrero Simon, Ramon
dc.contributor.author	Staliunas, Kestutis
dc.date	2018
dc.identifier.citation	Medina, J. [et al.]. Stabilization of Broad Area Semiconductor Laser Sources. A: International Conference on Transparent Optical Networks. "ICTON 2018: 20th Anniversary International Conference on Transparent Optical Networks: 1-5 July 2018, Bucharest, Romania". Institute of Electrical and Electronics Engineers (IEEE), 2018, p. 1-3.
dc.identifier.citation	978-1-5386-6604-3
dc.identifier.citation	10.1109/ICTON.2018.8473604
dc.identifier.uri	http://hdl.handle.net/2117/132937
dc.language.iso	eng
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)
dc.relation	https://ieeexplore.ieee.org/document/8473604
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Física
dc.subject	Semiconductor lasers
dc.subject	Broad area semiconductor
dc.subject	Modulation instability
dc.subject	Gain-loss
dc.subject	Nanophotonics
dc.subject	Stabilization
dc.subject	Làsers de semiconductors
dc.title	Stabilization of Broad Area Semiconductor Laser Sources
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/conferenceObject
dc.description.abstract	We numerically proof the stabilization of broad area semiconductor laser sources by introducing simultaneous in-phase two-dimensional modulations on the refractive index and on the pump (gain). We also examine the interplay between the index and gain modulations and the effect of the slow relaxation of carriers on the stability performance.
dc.description.abstract	Peer Reviewed

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