Universitat Autònoma de Barcelona
Petti, Daniela
Albisetti, Edoardo
Reichlová, Helena
Gázquez Alabart, Jaume
Varela del Arco, María
Molina Ruiz, Manel
Lopeandía Fernández, Aitor
Olejník, Kamil
Novák, Vít
Fina, Ignasi
Dkhil, Brahim
Hayakawa, Jun
Marti, Xavier
Wunderlich, Jöerg
Jungwirth, Tomas
Bertacco, Riccardo
American Institute of Physics
2013
In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.
English
Antiferromagnetism; Tunneling; Magnetic fields; Atomic force microscopy; Ferromagnetism; Magnetic tunnel junctions
Applied physics letters ; Vol. 102, Issue 19 (May 2013), p. 192404/1-192404-4
open access
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