dc.contributor.author
Martí Rovirosa, Xavier
dc.contributor.author
Fina, Ignasi
dc.contributor.author
Skumryev, Vassil
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Ferrater Martorell, Cèsar
dc.contributor.author
Varela Fernández, Manuel, 1956-
dc.contributor.author
Fábrega Sánchez, Lourdes
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Sánchez Barrera, Florencio
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Fontcuberta, Josep
dc.identifier
https://ddd.uab.cat/record/116006
dc.identifier
urn:10.1063/1.3238287
dc.identifier
urn:oai:ddd.uab.cat:116006
dc.identifier
urn:recercauab:ARE-69500
dc.identifier
urn:articleid:10773118v95n14p142903/1
dc.identifier
urn:scopus_id:70349925112
dc.identifier
urn:wos_id:000270670200051
dc.identifier
urn:oai:egreta.uab.cat:publications/f1ffed9f-5050-449a-9025-d09b00d16d60
dc.description.abstract
This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
dc.description.abstract
Orthorhombic YMnO3epitaxialthin films were grown on Nb(0.5%)-doped SrTiO3(001) substrates. Film's thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more distorted. Dielectric properties were investigated as a function of the temperature and magnetic field. The dielectric peak occurring at temperatures below the antiferromagnetic ordering is proved to be magnetoelectric and its amplitude is dependent on the unit cell distortion. These findings allow tailoring ferromagnetic and magnetoelectric properties via epitaxial strain.
dc.format
application/pdf
dc.relation
Applied physics letters ; Vol. 95, Issue 14 (October 2009), p. 142903/1-142903/3
dc.rights
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dc.rights
https://rightsstatements.org/vocab/InC/1.0/
dc.subject
Magnetic fields
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Dielectric thin films
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Dielectric properties
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Antiferromagnetism
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Ferromagnetism
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Magnetic films
dc.title
Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films