Universitat Autònoma de Barcelona
A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several milliamperes through the graphene device, which is here typically a few microns wide. This ultrahigh current density is shown to remove contamination adsorbed on the surface. This method is well suited for quantum electron transport studies of undoped graphene devices, and its utility is demonstrated here by measuring the anomalous quantum Hall effect.
English
Graphene; Doping; Atomic force microscopy; Electric currents; Gold; Annealing; Nanoparticles; Current density; Materials properties; Quantum; Hall effects
Applied physics letters ; Vol. 91, Issue 16 (October 2007), p. 163513/1-163513/3
open access
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