dc.contributor.author
Oriols, Xavier
dc.contributor.author
Suñé, Jordi,
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Martín, Ferran
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American Physical Society
dc.identifier
https://ddd.uab.cat/record/116258
dc.identifier
urn:10.1063/1.1482136
dc.identifier
urn:oai:ddd.uab.cat:116258
dc.identifier
urn:recercauab:ARE-41795
dc.identifier
urn:articleid:10773118v80n21p4048
dc.identifier
urn:scopus_id:79956007352
dc.identifier
urn:wos_id:000175709000056
dc.identifier
urn:oai:egreta.uab.cat:publications/403e98e4-2ed5-4b61-a767-9f6ab6289591
dc.description.abstract
The power spectral density of current noise in phase-coherent semiconductortunneling scenarios is studied in terms of Bohm trajectories associated to time-dependent wave packets. In particular, the influence of the particles reflected by the barrier on the noise spectrum is analyzed. An enhancement of the power spectral density of the current fluctuations is predicted for very high frequencies. The experimental measurement of this high frequency effect is discussed as a possible test of Bohm trajectories.
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application/pdf
dc.relation
Applied physics letters ; Vol. 80, Issue 21 (May 2002), p. 4048-4050
dc.rights
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dc.rights
https://rightsstatements.org/vocab/InC/1.0/
dc.subject
Semiconductors
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Acoustic noise measurement
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Acoustic noise spectra
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Frequency measurement
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High frequency effects
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Noise propagation
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Spectrum analysis
dc.title
High frequency components of current fluctuations in semiconductor tunneling barriers
