dc.contributor.author
Crespo Yepes, Albert
dc.contributor.author
Martin Martinez, Javier
dc.contributor.author
Rothschild, A.
dc.contributor.author
Rodríguez Martínez, Rosana
dc.contributor.author
Nafría i Maqueda, Montserrat
dc.contributor.author
Aymerich Humet, Xavier
dc.identifier
https://ddd.uab.cat/record/138450
dc.identifier
urn:10.1109/TDMR.2010.2098032
dc.identifier
urn:oai:ddd.uab.cat:138450
dc.identifier
urn:recercauab:ARE-79606
dc.identifier
urn:articleid:15304388v11n1p126
dc.identifier
urn:scopus_id:79952826424
dc.identifier
urn:wos_id:000288454700019
dc.identifier
urn:oai:egreta.uab.cat:publications/63cd67fe-7307-4792-a9ac-3d43a8f8492a
dc.description.abstract
The injected charge to recovery (QR) is presented as a parameter to characterize the dielectric breakdown (BD)reversibility in MOSFETs with ultrathin high-k hafnium based gate dielectric. The procedure to recover the dielectric is explained and the dependences of QR with the current limit during BD, the polarity of the BD-recovery stresses and the number of stress cycles are analyzed.
dc.format
application/pdf
dc.relation
Ministerio de Ciencia e Innovación TEC2007-61294/MIC
dc.relation
Agència de Gestió d'Ajuts Universitaris i de Recerca 2009/SGR-783
dc.relation
IEEE transactions on device and materials reliability ; Vol. 11, Issue 1 (March 2011), p. 126-130
dc.rights
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dc.rights
https://rightsstatements.org/vocab/InC/1.0/
dc.subject
Dielectric breakdown (BD)
dc.subject
BD reversibility
dc.subject
Resistive switching
dc.title
Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric
