The organization of nanowires on surfaces remains a major obstacle toward their large-scale integration into functional devices. Surface-material interactions have been used, with different materials and substrates, to guide horizontal nanowires during their growth into well-organized assemblies, but the only guided nanowire heterostructures reported so far are axial and not radial. Here, we demonstrate the guided growth of horizontal core-shell nanowires, specifically of ZnSe@ZnTe, with control over their crystal phase and crystallographic orientations. We exploit the directional control of the guided growth for the parallel production of multiple radial p-n heterojunctions and probe their optoelectronic properties. The devices exhibit a rectifying behavior with photovoltaic characteristics upon illumination. Guided nanowire heterostructures enable the bottom-up assembly of complex semiconductor structures with controlled electronic and optoelectronic properties.
Inglés
Epitaxy; Nanowire; Optoelectronic; Planar; ZnSe; ZnTe
European Commission 338849
Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1638
Ministerio de Economía y Competitividad MAT2014-59961-C2-2-R
Ministerio de Economía y Competitividad SEV-2013-0295
ACS nano ; Vol. 11, Núm. 6 (June 2017), p. 6155-6166
open access
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