dc.contributor.author
Neogi, Sanghamitra
dc.contributor.author
Reparaz, Juan Sebastián
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Pereira, Luiz Felipe C.
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Graczykowski, Bartlomiej
dc.contributor.author
Wagner, Markus R.
dc.contributor.author
Sledzinska, Marianna
dc.contributor.author
Shchepetov, Andrey
dc.contributor.author
Prunnila, Mika
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Ahopelto, Jouni
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Sotomayor Torres, Clivia M.
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Donadio, Davide
dc.identifier
https://ddd.uab.cat/record/210987
dc.identifier
urn:10.1021/nn506792d
dc.identifier
urn:oai:ddd.uab.cat:210987
dc.identifier
urn:scopus_id:84928975666
dc.identifier
urn:articleid:1936086Xv9n4p3820
dc.identifier
urn:wos_id:000353867000043
dc.identifier
urn:altmetric_id:3860825
dc.identifier
urn:icn2uab:6273094
dc.description.abstract
This is an open access article published under an ACS AuthorChoice License. See Standard ACS AuthorChoice/Editors' Choice Usage Agreement - https://pubs.acs.org/page/policy/authorchoice_termsofuse.html
dc.description.abstract
A detailed understanding of the connections of fabrication and processing to structural and thermal properties of low-dimensional nanostructures is essential to design materials and devices for phononics, nanoscale thermal management, and thermoelectric applications. Silicon provides an ideal platform to study the relations between structure and heat transport since its thermal conductivity can be tuned over 2 orders of magnitude by nanostructuring. Combining realistic atomistic modeling and experiments, we unravel the origin of the thermal conductivity reduction in ultrathin suspended silicon membranes, down to a thickness of 4 nm. Heat transport is mostly controlled by surface scattering: rough layers of native oxide at surfaces limit the mean free path of thermal phonons below 100 nm. Removing the oxide layers by chemical processing allows us to tune the thermal conductivity over 1 order of magnitude. Our results guide materials design for future phononic applications, setting the length scale at which nanostructuring affects thermal phonons most effectively.
dc.format
application/pdf
dc.relation
European Commission 309150
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European Commission 604668
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European Commission 318117
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Ministerio de Economía y Competitividad MAT2012-31392
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Ministerio de Ciencia e Innovación CSD2010-0044
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European Commission 628197
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ACS nano ; Vol. 9, Issue 4 (April 2015), p. 3820-3828
dc.rights
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dc.rights
https://rightsstatements.org/vocab/InC/1.0/
dc.subject
Classical molecular dynamics
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Dispersion relations
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Inelastic light scattering
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Lattice thermal transport
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Phonon engineering
dc.title
Tuning Thermal Transport in Ultrathin Silicon Membranes by Surface Nanoscale Engineering