Strong strain gradients and phase coexistence at the metal-insulator transition in VO2 epitaxial films

dc.contributor.author
Rodríguez Domínguez, Laura
dc.contributor.author
Sandiumenge Ortiz, Felip
dc.contributor.author
Frontera, Carlos
dc.contributor.author
Caicedo Roque, Jose Manuel
dc.contributor.author
Padilla-Pantoja, Jessica
dc.contributor.author
Catalan, Gustau
dc.contributor.author
Santiso, José
dc.date.issued
2021
dc.identifier
https://ddd.uab.cat/record/268421
dc.identifier
urn:10.1016/j.actamat.2021.117336
dc.identifier
urn:oai:ddd.uab.cat:268421
dc.identifier
urn:scopus_id:85116111952
dc.identifier
urn:articleid:13596454v220a117336
dc.identifier
urn:icn2uab:6529838
dc.description.abstract
Altres ajuts: ICN2 is funded by the CERCA programme/Generalitat de Catalunya.
dc.description.abstract
The proximity of a thermodynamic triple point and the formation of transient metastable phases may result in complex phase and microstructural trajectories across the metal-insulator transition in strained VO films. A detailed analysis using in-situ synchrotron X-ray diffraction unveils subtle fingerprints of this complexity in the structure of epitaxial films. During phase transition the low-temperature monoclinic M1 phase is constrained along the {111} planes by the coexisting high-temperature R phase domains, which remain epitaxially clamped to the substrate. This geometrical constraint induces counteracting local stresses that result in a combined tilt and uniaxial in-plane compression of M1 domains, and a concomitant anomalous c-axis elongation. This mechanism progressively transforms the M1 phase into the transitional triclinic phase (T), and ultimately into the monoclinic M2 phase, generating strong strain and tilt gradients that remain frozen after the complete transformation of the R phase upon cooling to RT. The transformation path of VO films, the complex competition between stable and metastable VO polymorphs and its impact on the structure of the low temperature monoclinic state, provide essential insights for understanding the electronic and mechanical properties of the films at the nanoscale, as well as to control their use in functional devices.
dc.format
application/pdf
dc.language
eng
dc.publisher
dc.relation
European Commission 730872
dc.relation
Agencia Estatal de Investigación PID2019-108573GB-C21
dc.relation
Ministerio de Economía, Industria y Competitividad SEV-2017-0706
dc.relation
Ministerio de Economía, Industria y Competitividad MAT2016-77100-C2-1-P
dc.relation
Agencia Estatal de Investigación RTI2018-098537-B-C21
dc.relation
Ministerio de Economía y Competitividad SEV-2015-0496
dc.relation
Agència de Gestió d'Ajuts Universitaris i de Recerca 2017/SGR-579
dc.relation
Acta Materialia ; Vol. 220 (Nov. 2021), art. 117336
dc.rights
open access
dc.rights
Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.
dc.rights
https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject
Metal-insulator transitions
dc.subject
Phase coexistence
dc.subject
Martensitic transitions
dc.subject
Local strain fields
dc.title
Strong strain gradients and phase coexistence at the metal-insulator transition in VO2 epitaxial films
dc.type
Article


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)