dc.contributor
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor
Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author
Boronat, A
dc.contributor.author
Silvestre Bergés, Santiago
dc.contributor.author
Fuertes Marrón, D.
dc.contributor.author
Castañer Muñoz, Luis María
dc.contributor.author
Martí, A.
dc.contributor.author
Luque, Antonio
dc.date.issued
2012-08-14
dc.identifier
Boronat, A. [et al.]. Optical absorption of radio frequency sputtered GaAs(Ti) films. "Journal of materials science. Materials in electronics", 14 Agost 2012, vol. on line, núm. on line, p. 1-6.
dc.identifier
https://hdl.handle.net/2117/16705
dc.identifier
10.1007/s10854-012-0864-9
dc.description.abstract
Composition and optical absorption of thin films
of GaAs(Ti) and GaAs, deposited by sputtering on glass
substrates under different process conditions, have been
investigated. The thin films obtained are typically 200 nm
thick. ToF–SIMS measurements show a quite constant
concentration and good uniformity of Ti profiles along the
GaAs(Ti) layers in all cases and EPMA results indicate that
Ti content increases with the substrate temperature in the
sputtering process. Measurements of the transmittance and
reflectance spectra of the GaAs and GaAs(Ti) thin films have
been carried out. In the optical characterization of the films it
is found that optical absorption is enhanced in all samples
containing Ti. The determination of the optical gap from the
optical absorption, shows optical gap variations from 1.15 to
1.29 eV in the GaAs thin films, and from 0.83 to 1.13 eV in
the GaAs(Ti) thin films. The differences in absorption and
EgTAUC observed between samples of GaAs and GaAs(Ti)
are consistent with the presence of an intermediate band.
dc.description.abstract
Peer Reviewed
dc.description.abstract
Postprint (published version)
dc.format
application/pdf
dc.relation
http://www.springerlink.com/content/6j166q253676668j/
dc.rights
Restricted access - publisher's policy
dc.subject
Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject
Àrees temàtiques de la UPC::Enginyeria dels materials
dc.subject
Materials--Electric properties
dc.subject
Materials--Propietats elèctriques
dc.title
Optical absorption of radio frequency sputtered GaAs(Ti) films
