dc.contributor
Universitat Politècnica de Catalunya. Doctorat en Teoria del Senyal i Comunicacions
dc.contributor
Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.contributor
Universitat Politècnica de Catalunya. CSC - Components and Systems for Communications Research Group
dc.contributor.author
García Pastor, David
dc.contributor.author
Collado Gómez, Juan Carlos
dc.contributor.author
Mateu Mateu, Jordi
dc.contributor.author
Aigner, Robert
dc.date.issued
2019-12-17
dc.identifier
Garcia, D. [et al.]. Third-Harmonic and intermodulation distortion in bulk acoustic-wave resonators. "IEEE transactions on microwave theory and techniques", 17 Desembre 2019, p. 1-8.
dc.identifier
https://hdl.handle.net/2117/180458
dc.identifier
10.1109/TMTT.2019.2955135
dc.description.abstract
This article discusses on the measured third-order intermodulation (IMD3) products and third harmonics (H3) appearing in a set of six different solidly mounted resonators (SMR) and bulk acoustic-wave (BAW) resonators with different shapes and stack configurations. The discussion is supported by a comprehensive nonlinear distributed circuit model that considers the nonlinear effects potentially occurring in any layer of the resonator stack. The aluminum-nitride (AlN) and silicon-dioxide (SiO2) layers are identified as the most significant contributors to the IMD3 and H3. The frequency profile of the third-order spurious signals also reveals that, in temperature-compensated resonators, where the SiO2 layers are usually thicker, the remixing effects from the second-order nonlinear terms are the major contributors to the IMD3 and H3. These second-order terms are those that explain the second-harmonic (H2) generation, whose measurements are also reported in this article. Unique values of the nonlinear material constants can explain all the measurements despite the resonators have different shapes, resonance frequencies, and stack configurations.
dc.description.abstract
Peer Reviewed
dc.description.abstract
Postprint (author's final draft)
dc.format
application/pdf
dc.publisher
IEEE Microwave Theory and Techniques Society
dc.relation
https://ieeexplore.ieee.org/document/8935520
dc.subject
Àrees temàtiques de la UPC::Enginyeria de la telecomunicació
dc.subject
Electric filters
dc.subject
Microwave circuits
dc.subject
Aluminum nitride (AlN)
dc.subject
Bulk acoustic wave (BAW)
dc.subject
Electroacoustic
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Nonlinearities
dc.subject
Silicon dioxide SiO2
dc.subject
Solidly mounted resonators (SMRs)
dc.subject
Third-harmonic (H3)
dc.subject
third-order intermodulation (IMD3)
dc.subject
third-order intermodulation (IMD3) product
dc.subject
Circuits de microones
dc.subject
Filtres elèctrics
dc.title
Third-Harmonic and intermodulation distortion in bulk acoustic-wave resonators
