dc.contributor
Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
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Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
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Lázaro Guillén, Antoni
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Pradell i Cara, Lluís
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O'Callaghan Castellà, Juan Manuel
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Lazaro, A.; Pradell, L.; O'Callaghan, J.M. FET noise-parameter determination using a novel technique based on 50-Ω noise-figure measurements. IEEE Transactions on microwave theory and techniques, 1999, vol.47, issue 3, p. 315-324
dc.identifier
https://hdl.handle.net/2117/671
dc.description.abstract
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [C11INT, C22INT, Re(C12 INT), Im(C12INT)] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tuner-based methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain-current and gate-length is obtained.
dc.description.abstract
Peer Reviewed
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application/pdf
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Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
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Microwave measurements
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electric noise measurement
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equivalent circuits
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microwave field effect transistors
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microwave measurement
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semiconductor device measurement
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semiconductor device models
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semiconductor device noise
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Microones -- Dispositius
dc.title
Fet noise-parameter determination using a novel technique based on 50 noise measurements
