dc.contributor
Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.contributor
Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
dc.contributor.author
Lázaro Guillén, Antoni
dc.contributor.author
Pradell i Cara, Lluís
dc.contributor.author
O'Callaghan Castellà, Juan Manuel
dc.identifier
Lazaro, A., Pradell, L., O'callaghan, J. FET noise-parameter determination using a novel technique based on 50 noise measurements. "IEEE transactions on microwave theory and techniques", Març 1999, vol. 47, núm. 3, p. 315-324.
dc.identifier
https://hdl.handle.net/2117/86312
dc.identifier
10.1109/22.750233
dc.description.abstract
A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [CINT 11 , CINT 22 , Re(CINT 12 ), Im(CINT 12 )] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F50-based and tunerbased methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain–current and gate–length is obtained.
dc.description.abstract
Peer Reviewed
dc.description.abstract
Postprint (published version)
dc.format
application/pdf
dc.publisher
IEEE Microwave Theory and Techniques Society
dc.relation
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=750233
dc.subject
Àrees temàtiques de la UPC::Enginyeria electrònica
dc.subject
Acoustic reflection
dc.title
FET noise-parameter determination using a novel technique based on 50 noise measurements
