Título:
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SrRuO3/SrTiO3/SrRuO3 heterostructures for magnetic tunnel junctions
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Autor/a:
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Herranz Casabona, Gervasi; Martínez Perea, Benjamin; Fontcuberta i Griñó, Josep; Sánchez Barrera, Florencio; García-Cuenca Varona, María Victoria; Ferrater Martorell, Cèsar; Varela Fernández, Manuel, 1956-
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Otros autores:
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Universitat de Barcelona |
Abstract:
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We report on the growth and characterization of SrRuO3 single layers and SrRuO3/SrTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates. The thickness dependence of the coercivity was determined for these single layers. Heterostructures with barrier thickness tb=1, 2.5, and 4 nm were fabricated, with electrodes having thickness ranging from 10 to 100 nm. The hysteresis loops of heterostructures with tb=2.5¿nm, 4 nm reveal uncoupled magnetic switching of the electrodes. Therefore, these heterostructures can be used for the fabrication of magnetic tunneling junctions. |
Materia(s):
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-Histèresi -Magnetisme -Elèctrodes -Hysteresis -Magnetism -Electrodes |
Derechos:
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(c) American Institute of Physics, 2003
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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