Título:
|
Silicon nanocluster sensitization of erbium ions under low-energy optical excitation
|
Autor/a:
|
Prtljaga, Nikola; Navarro Urrios, Daniel; Pitanti, Alessandro; Ferrarese Lupi, Federico; Garrido Fernández, Blas; Pavesi, Lorenzo
|
Otros autores:
|
Universitat de Barcelona |
Abstract:
|
The sensitizing action of amorphous silicon nanoclusters on erbium ions in thin silica films has been studied under low-energy (long wavelength) optical excitation. Profound differences in fast visible and infrared emission dynamics have been found with respect to the high-energy (short
wavelength) case. These findings point out to a strong dependence of the energy transfer process on the optical excitation energy. Total inhibition of energy transfer to erbium states higher than the
first excited state (4I13/2) has been demonstrated for excitation energy below 1.82 eV (excitation wavelength longer than 680 nm). Direct excitation of erbium ions to the first excited state (4I13/2)
has been confirmed to be the dominant energy transfer mechanism over the whole spectral range of optical excitation used (540 nm¿680 nm). |
Materia(s):
|
-Fotònica -Silici -Nanocristalls -Photonics -Silicon -Nanocrystals |
Derechos:
|
(c) American Institute of Physics, 2012
|
Tipo de documento:
|
Artículo Artículo - Versión publicada |
Editor:
|
American Institute of Physics
|
Compartir:
|
|