Title:
|
Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation
|
Author:
|
Ramírez, Joan Manel; Ferrarese Lupi, Federico; Jambois, Olivier; Berencén Ramírez, Yonder Antonio; Navarro Urrios, Daniel; Anopchenko, Aleksei; Marconi, Alessandro; Prtljaga, Nikola; Tengattini, Andrea; Pavesi, Lorenzo; Colonna, Jean Philippe; Fedeli, Jean Marc; Garrido Fernández, Blas
|
Other authors:
|
Universitat de Barcelona |
Abstract:
|
The electroluminescence (EL) at 1.54 µm of metal-oxide-semiconductor (MOS) devices with Er3+ ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3+ emission under an alternate pulsed voltage signal (APV). Energy transfer from silicon nanoclusters (Si-ncs) to Er3+ is clearly observed at low-field APV excitation. We demonstrate that sequential electron and hole injection at the edges of the pulses creates excited states in Si-ncs which upon recombination transfer their energy to Er3+ ions. On the contrary, direct impact excitation of Er3+ by hot injected carriers starts at the Fowler-Nordheim injection threshold (above 5 MV cm−1) and dominates for high-field APV excitation. |
Subject(s):
|
-Metall-òxid-semiconductors -Compostos de silici -Transferència d'energia -Metal oxide semiconductors -Silicon compounds -Energy transfer |
Rights:
|
(c) Institute of Physics (IOP), 2012
|
Document type:
|
Article Article - Accepted version |
Published by:
|
Institute of Physics (IOP)
|
Share:
|
|