dc.contributor.author
Roura Grabulosa, Pere
dc.contributor.author
Farjas Silva, Jordi
dc.contributor.author
Roca i Cabarrocas, Pere
dc.date.accessioned
2024-06-14T09:36:11Z
dc.date.available
2024-06-14T09:36:11Z
dc.identifier
Roura, P., Farjas, J., i Roca i Cabarrocas, P. (2008). Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon. Journal of Applied Physics, 104 (7), 73521. Recuperat 7 febrer 2011 0, a http://link.aip.org/link/doi/10.1063/1.2990767
dc.identifier
http://hdl.handle.net/10256/3222
dc.identifier.uri
https://hdl.handle.net/10256/3222
dc.description.abstract
A thorough critical analysis of the theoretical relationships between the bond-angle dispersion in a-Si, Δθ, and the width of the transverse optical Raman peak, Γ, is presented. It is shown that the discrepancies between them are drastically reduced when unified definitions for Δθ and Γ are used. This reduced dispersion in the predicted values of Δθ together with the broad agreement with the scarce direct determinations of Δθ is then used to analyze the strain energy in partially relaxed pure a-Si. It is concluded that defect annihilation does not contribute appreciably to the reduction of the a-Si energy during structural relaxation. In contrast, it can account for half of the crystallization energy, which can be as low as 7 kJ/mol in defect-free a-Si
dc.format
application/pdf
dc.publisher
American Institute of Physics
dc.relation
info:eu-repo/semantics/altIdentifier/doi/10.1063/1.2990767
dc.relation
info:eu-repo/semantics/altIdentifier/issn/0021-8979
dc.relation
info:eu-repo/semantics/altIdentifier/eissn/1089-7550
dc.rights
Tots els drets reservats
dc.rights
info:eu-repo/semantics/openAccess
dc.source
© Journal of Applied Physics, 2008, vol. 104, núm. 7
dc.source
Articles publicats (D-F)
dc.subject
Cristal·lització
dc.subject
Espectroscòpia Raman
dc.subject
Moviment ondulatori, Teoria del
dc.subject
Reaccions d'anihilació
dc.subject
Semiconductors amorfs
dc.subject
Amorphous semiconductors
dc.subject
Annihilation reactions
dc.subject
Crystallization
dc.subject
Raman spectroscopy
dc.title
Quantification of the bond-angle dispersion by Raman spectroscopy and the strain energy of amorphous silicon
dc.type
info:eu-repo/semantics/article
