Title:
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Measurement of the specific heat and determination of the thermodynamic functions of relaxed amorphous silicon
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Author:
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Roura Grabulosa, Pere; Taïr, Fadila; Farjas Silva, Jordi; Roca i Cabarrocas, Pere
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Abstract:
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The specific heat, cp, of two amorphous silicon (a-Si) samples has been measured by differential scanning calorimetry in the 100–900K temperature range. When the hydrogen content is reduced by thermal annealing, cp approaches the value of crystalline Si (c-Si). Within experimental accuracy, we conclude that cp of relaxed pure a-Si coincides with that of c-Si. This result is used to determine the enthalpy, entropy, and Gibbs free energy of defect-free relaxed a-Si. Finally, the contribution of structural defects on these quantities is calculated and the melting point of several states of a-Si is predicted |
Subject(s):
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-Semiconductors amorfs -Amorphous semiconductors -Termodinàmica -Thermodynamic |
Rights:
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Tots els drets reservats
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Document type:
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Article Article - Published version |
Published by:
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American Institute of Physics
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