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Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

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Author

Jiménez Jiménez, David

Suñé, Jordi,

Miranda, Enrique

Tsurumaki-Fukuchi, Atsushi

Yamada, Hiroyuki

Sawa, Akihito

American Institute of Physics

Publication date

2013

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Abstract

We demonstrate the feasibility of multilevel recording in Pt/Bi1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1-δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1-δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory.

Document Type

Article

Language

English

Subjects and keywords

Ferroelectric elements; Fixed capacitors; Static stores

Publisher

 

Related items

Applied physics letters ; Vol. 103, Issue 26 (December 2013), p. 263502/1-263502/4

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open access

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Articles escrits per personal UAB o publicats per la universitat [88071]