dc.contributor.author
Claramunt, Sergi
dc.contributor.author
Wu, Qian
dc.contributor.author
Maestro Izquierdo, Marcos
dc.contributor.author
Porti i Pujal, Marc
dc.contributor.author
Bargallo Gonzalez, Mireia
dc.contributor.author
Martin Martinez, Javier
dc.contributor.author
Campabadal, Francesca
dc.contributor.author
Nafría i Maqueda, Montserrat
dc.identifier
https://ddd.uab.cat/record/163085
dc.identifier
urn:10.1016/j.mee.2015.04.112
dc.identifier
urn:oai:ddd.uab.cat:163085
dc.identifier
urn:recercauab:ARE-79630
dc.identifier
urn:articleid:01679317v147p335
dc.identifier
urn:scopus_id:84929332833
dc.identifier
urn:wos_id:000362308000080
dc.identifier
urn:oai:egreta.uab.cat:publications/c778501f-2622-4612-b542-b50f08137b61
dc.description.abstract
Altres ajuts: ERDF/TEC2011-2792-C02-02
dc.description.abstract
Conductive filaments (CFs) in Ni/HfO₂/Si resistive switching structures are analysed at the nanoscale by means of Conductive Atomic Force Microscopy (CAFM). Differences in the CF conductivity are measured depending on the resistive state of the device. Moreover, for both resistance states, non-homogeneous conduction across the CF area is observed, in agreement with a tree-shaped CF.
dc.format
application/pdf
dc.relation
Ministerio de Economía y Competitividad TEC2013-45638-C3-1-R
dc.relation
Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-384
dc.relation
Microelectronic engineering ; Vol. 147 (November 2015), p. 335-338
dc.rights
Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
dc.rights
https://rightsstatements.org/vocab/InC/1.0/
dc.subject
Resistive switching
dc.subject
Metal-insulator-semiconductor (MIS)
dc.title
Non-homogeneuos conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM
