New high resolution random telegraph noise (RTN) characterization method for resistive RAM

Author

Maestro Izquierdo, Marcos

Diaz-Fortuny, Javier

Crespo Yepes, Albert

Bargallo Gonzalez, Mireia

Martin Martinez, Javier

Rodríguez Martínez, Rosana

Nafría i Maqueda, Montserrat

Campabadal, Francesca

Aymerich Humet, Xavier

Publication date

2016

Abstract

Random Telegraph Noise (RTN) is one of the main reliability problems of resistive switching-based memories. To understand the physics behind RTN, a complete and accurate RTN characterization is required. The standard equipment used to analyse RTN has a typical time resolution of ∼2 ms which prevents evaluating fast phenomena. In this work, a new RTN measurement procedure, which increases the measurement time resolution to 2 μs, is proposed. The experimental set-up, together with the recently proposed Weighted Time Lag (W-LT) method for the analysis of RTN signals, allows obtaining a more detailed and precise information about the RTN phenomenon.

Document Type

Article

Language

English

Subjects and keywords

Resistive switching; Random telegraph noise; Resolution; Time constants; RRAM

Publisher

 

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Rights

open access

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