Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies

Abstract

Altres ajuts:Reference of the GraphCAT project 001-P-001702

The accuracy of contact resistance values of two-dimensional (2D) field-effect transistors extracted with the Y-function considering the impact of the intrinsic mobility degradation is evaluated here. The difference between methodologies that take this factor into account and ignore it is pointed out by a detailed analysis of the approximations of the transport model used for each extraction. In contrast to the oftenly used approach where the intrinsic mobility degradation is neglected, a Y-function-based method considering a more complete transport model yields contact resistance values similar to reference values obtained by other intricate approaches. The latter values are more suitable also to describe experimental data of 2D devices of different technologies. The intrinsic mobility degradation factor of 2D transistors is experimentally characterised for the first time and its impact on the device performance is described and evaluated.