dc.contributor
Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor
Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author
Orpella García, Alberto
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Vetter, Michael
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Ferré Tomas, Rafel
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Martín García, Isidro
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Puigdollers i González, Joaquim
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Voz Sánchez, Cristóbal
dc.contributor.author
Alcubilla González, Ramón
dc.identifier
Orpella, A., Vetter, M., Ferre, R., Martin, I., Puigdollers, J., Voz, C., Alcubilla, R. Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide. "Solar energy materials and solar cells", Gener 2005, vol. 87, núm. 1-4, p. 667-674.
dc.identifier
https://hdl.handle.net/2117/113361
dc.identifier
10.1016/j.solmat.2004.08.021
dc.description.abstract
We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current density (). We use the quasy-steady state photoconductance method to determine the dependence of effective lifetime on excess carrier density and from these measurements we obtain values in the range of 300 fA cm-2 for sheet resistances around 100 O¿sq. Finally, we obtain effective surface recombination velocity values around 104 cm s-1 by fitting the measured values with PC1D simulated ones.
dc.description.abstract
Peer Reviewed
dc.description.abstract
Postprint (published version)
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application/pdf
dc.relation
https://www.sciencedirect.com/science/article/pii/S0927024804003848
dc.rights
Restricted access - publisher's policy
dc.subject
Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
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Silicon-carbide thin film
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Amorphous silicon carbide (a-SIC:H(n))
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Emitter saturation current density
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Capes fines de carbur de silici
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Cèl·lules solars
dc.title
Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide