dc.contributor.author
Beckers, L.
dc.contributor.author
Sánchez Barrera, Florencio
dc.contributor.author
Schubert, J.
dc.contributor.author
Zander, W.
dc.contributor.author
Buchal, Ch.
dc.date.issued
2012-05-03T07:17:02Z
dc.date.issued
2012-05-03T07:17:02Z
dc.date.issued
1996-03-15
dc.identifier
https://hdl.handle.net/2445/24791
dc.description.abstract
Epitaxial thin films of Y¿doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000¿1200¿°C and at an oxygen pressure of 1.5×10¿1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x¿ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101]¿MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve.
dc.format
application/pdf
dc.format
application/pdf
dc.publisher
American Institute of Physics
dc.relation
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.361234
dc.relation
Journal of Applied Physics, 1996, vol. 79, núm. 6, p. 3337-3339
dc.relation
http://dx.doi.org/10.1063/1.361234
dc.rights
(c) American Institute of Physics, 1996
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Física Aplicada)
dc.subject
Pel·lícules fines
dc.subject
Superconductivitat
dc.subject
Superconductivity
dc.title
Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/publishedVersion
