dc.contributor.author
Muñoz Ramos, David
dc.contributor.author
Voz Sánchez, Cristóbal
dc.contributor.author
Blanque, S.
dc.contributor.author
Ibarz, D.
dc.contributor.author
Bertomeu i Balagueró, Joan
dc.contributor.author
Alcubilla González, Ramón
dc.date.issued
2013-10-18T09:17:27Z
dc.date.issued
2013-10-18T09:17:27Z
dc.date.issued
2013-10-18T09:17:27Z
dc.identifier
https://hdl.handle.net/2445/47148
dc.description.abstract
In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρc ∼ 10 mΩ cm2) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.
dc.format
application/pdf
dc.format
application/pdf
dc.publisher
Elsevier B.V.
dc.relation
Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.mseb.2008.10.049
dc.relation
Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2009, vol. 159-160, p. 23-26
dc.relation
http://dx.doi.org/10.1016/j.mseb.2008.10.049
dc.rights
(c) Elsevier B.V., 2009
dc.rights
info:eu-repo/semantics/openAccess
dc.source
Articles publicats en revistes (Física Aplicada)
dc.subject
Deposició química en fase vapor
dc.subject
Cèl·lules solars
dc.subject
Corrosió i anticorrosius
dc.subject
Semiconductors
dc.subject
Chemical vapor deposition
dc.subject
Corrosion and anti-corrosives
dc.subject
Semiconductors
dc.title
Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD
dc.type
info:eu-repo/semantics/article
dc.type
info:eu-repo/semantics/acceptedVersion
